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Spot original supply hot selling NCE6602N SOT23 high-voltage N+P-channel IGBT field-effect transistor
Manufacturer Product Number
NCE6602N
Description
N+P-Channel Enhancement Mode Power MOSFET
Package Condition
Tape and Reel
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| Part# | NCE6602N |
| Type： | N+P-Channel Enhancement Mode Power MOSFET |
| Manufactor | - |
| DC | NEW |
| Describe | SOT23 |
| Supplier Device Packaging | REEL |
| Technology | Trench dual core |
| Polarity | N+P |
| BVDSS(V) | -30 |
| ID(A) | -2.7 |
| VTH(V) | -1.6 |
| RDS(ON)@10VTyp(mΩ) | 69 |
| RDS(ON)@4.5VTyp(mΩ) | 110 |
| QG(nC) | 5.8 |
| PD(W) | 1.2 |
Product Data Book：https://allnewsemi.shop/img/cms/NCE6602N.pdf
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N+P-Channel Enhancement Mode Power MOSFET
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