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Original spot Trench dual core NCE60ND45G DFN8 best-selling product High voltage N+N channel IGBT field-effect transistor

Manufacturer
NCE
Manufacturer Product Number
NCE60ND45G
Description

high-voltage N+N-channel IGBT field-effect transistor

Package Condition
Tape and Reel
NCE30NP4030G NCE60ND45G
Type： High-voltage N+N-channel IGBT field-effect transistor
Manufactor NCE
DC NEW
Describe DFN5X6-8L
Supplier Device Packaging REEL
Technology Trench dual core
Polarity N+N
BVDSS(V) 60
ID(A) 45
VTH(V) 3
RDS(ON)@10VTyp(mΩ) 11
QG(nC) 52
PD(W) 60

Product Data Book：https://allnewsemi.shop/img/cms/NCE60ND45G.pdf

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Original spot Trench dual core NCE60ND45G DFN8 best-selling product High voltage N+N channel IGBT field-effect transistor

high-voltage N+N-channel IGBT field-effect transistor

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