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Original stock NCE10TD60BD TO-263 best-selling product N-Channel Enhancement Mode Power MOSFET
Manufacturer Product Number
NCE10TD60BD
Description
High-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
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| NCE30NP4030G | NCE10TD60BD |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | - |
| DC | NEW |
| Describe | TO-263 |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 600 |
| IC(A)100℃ | 10 |
| PD(W)25℃ | 100 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| Switching Frequency | 0~60KHz |
| Tsc(us) | 5 |
Product Data Book：https://allnewsemi.shop/img/cms/NCE10TD60BD.pdf
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High-voltage N-channel IGBT field-effect transistor
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