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Spot original supply hot selling high-pressure N-channel IGBT field-effect transistor NCE6020AL TO251S
Manufacturer
Manufacturer Product Number
NCE6020AL
Description
High-voltage N-channel IGBT field-effect transistors
Package Condition
TUBE
| Part# | NCE6020AL |
| Type： | high-voltage N-channel IGBT MOS tube |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251S |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 60 |
| ID(A) | 20 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 21 |
| RDS(ON)@4.5VTyp(mΩ) | 25.5 |
| QG(nC) | 25 |
| PD(W) | 30 |
| PKG | / |
Product Data Book: https://allnewsemi.shop/img/cms/NCE6020AL.pdf
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High-voltage N-channel IGBT field-effect transistors
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