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IC chip high-voltage N-channel IGBT MOS transistor NCE3080I TO251 hot selling spot original
Manufacturer
Manufacturer Product Number
NCE3080I
Description
High-voltage N-channel IGBT field-effect transistors
Package Condition
TUBE
| Part# | NCE3080I |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO251 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 30 |
| ID(A) | 80 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 5.5 |
| RDS(ON)@4.5VTyp(mΩ) | 7.5 |
| QG(nC) | 60.5 |
| PD(W) | 83 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE3080I.pdf
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High-voltage N-channel IGBT field-effect transistors
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