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High voltage N-channel IGBT MOS transistor NCE1102N hot selling spot product SOT23 chip
Manufacturer Product Number
NCE1102N
Description
High-voltage N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
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| Part# | NCE1102N |
| Type： | N-Channel Enhancement Mode Power MOSFET |
| Manufactor | - |
| DC | NEW |
| Describe | SOT-23 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 110 |
| ID(A) | 2 |
| VTH(V) | 1.8 |
| RDS(ON)@10VTyp(mΩ) | 220 |
| RDS(ON)@4.5VTyp(mΩ) | 260 |
| QG(nC) | 5.2 |
| PD(W) | 1.25 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE1102N.pdf
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High-voltage N-channel IGBT field-effect transistor
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