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Original high-voltage N-channel IGBT MOS transistor NCE30H10 TO220 chip sold in stock
Manufacturer
Manufacturer Product Number
NCE30H10
Description
high-voltage N-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE30H10 |
| Type： | NCE N-Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO220 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 30 |
| ID(A) | 100 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 4 |
| RDS(ON)@4.5VTyp(mΩ) | 5 |
| QG(nC) | 70 |
| PD(W) | 110 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE30H10.pdf
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high-voltage N-channel IGBT field-effect transistor
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