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NCE01P13K TO252 chip high voltage P-channel IGBT MOS transistor original stock supply
Manufacturer
Manufacturer Product Number
NCE01P13K
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCE01P13K |
| Type： | NCE P-Channel Enhancement Mode Power MOSFET |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -100 |
| ID(A) | -13 |
| VTH(V) | -1.9 |
| RDS(ON)@10VTyp(mΩ) | 170 |
| RDS(ON)@4.5VTyp(mΩ) | 200 |
| QG(nC) | 33 |
| PD(W) | 40 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE01P13K.pdf
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high-voltage P-channel IGBT field-effect transistor
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