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NCE07TD60BI TO251 High voltage N-channel IGBT MOS transistor chip original stock
Manufacturer
Manufacturer Product Number
NCE07TD60BI
Description
High-voltage N-channel IGBT field-effect transistors
Package Condition
TUBE
| Part# | NCE07TD60BI |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| V(BR)CES (V) | 600 |
| IC(A)100℃ | 7 |
| PD(W)25℃ | 87 |
| VGE(V) | ±30 |
| VTH(V)Typ | 5 |
| VCE(sat)(V)@VGE=15V, 25℃Typ | 1.7 |
| VCE(sat)(V)@VGE=15V, 25℃Max | 1.9 |
| Switching Frequency | 0~60KHz |
| Tsc(us) | 5 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE07TD60BI.pdf
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High-voltage N-channel IGBT field-effect transistors
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