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Original stock NCE70T900I TO251 chip high-voltage N-channel IGBT MOS transistor
Manufacturer
Manufacturer Product Number
NCE70T900I
Description
High-voltage N-channel IGBT field-effect transistors
Package Condition
TUBE
| Part# | NCE70T900I |
| Type： | High-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-251 |
| Supplier Device Packaging | TUBE |
| Technology | SJ-Ⅲ |
| Polarity | N |
| BVDSS(V) | 700 |
| ID(A) | 5 |
| VTH(V) | 3.5 |
| RDS(ON)@10VTyp(mΩ) | 820 |
| QG(nC) | 10.5 |
| PD(W) | 46 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE70T900I.pdf
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High-voltage N-channel IGBT field-effect transistors
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