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High voltage P-channel IGBT MOS transistor NCE60P50 TO220 chip stock supply original
Manufacturer
Manufacturer Product Number
NCE60P50
Description
high-voltage P-channel IGBT field-effect transistor
Package Condition
TUBE
| Part# | NCE60P50 |
| Type： | high-voltage P-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO-220 |
| Supplier Device Packaging | TUBE |
| Technology | Trench |
| Polarity | P |
| BVDSS(V) | -60 |
| ID(A) | -50 |
| VTH(V) | -2.6 |
| RDS(ON)@10VTyp(mΩ) | 23 |
| QG(nC) | 75 |
| PD(W) | 95 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE60P50.pdf
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high-voltage P-channel IGBT field-effect transistor
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