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Hot sale Original STP33N60DM2 Transistors MOSFET N-CH 600V 24A TO220 N-Channel 600 V 24A (Tc) 190W (Tc) Through Hole TO-220
Manufacturer
Manufacturer Product Number
STP33N60DM2
Description
Original STP33N60DM2 Transistors MOSFET N-CH 600V 24A TO220 N-Channel 600 V 24A (Tc) 190W (Tc) Through Hole TO-220
Package Condition
Tube
Product Description
The STP33N60DM2 is a high-performance N-channel power MOSFET from STMicroelectronics, designed for switching applications. This single-channel MOSFET features a built-in diode and operates in enhancement mode. With a continuous drain current of 24A and a maximum pulsed drain current of 96A, it is suitable for high-power applications.
Product Features
· High avalanche energy rating of 570mJ
· High breakdown voltage of 600V
· Low Rds(on) of 130mΩ at 12A and 10V
· High gate charge of 43nC at 10V
· High input capacitance of 1870pF at 100V
· Operating temperature range of -55°C to 150°C
· RoHS3 compliant and REACH SVHC-free
Product Applications
· Primary applications: Switching power supplies, motor control, and power conversion systems
· Secondary applications: Audio amplifiers, LED drivers, and other high-power electronic systems
Embedded Modules:
· Power supplies
· Motor control systems
· Audio amplifiers
· LED drivers
Product Description
|
ANSC PART# |
ANSC-STP33N60DM2 |
|
Part# |
STP33N60DM2 |
|
Type： |
Transistor |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Product images
Product Attributes
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
STMicroelectronics |
|
Series |
MDmesh™ DM2 |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
600 V |
|
Current - Continuous Drain (Id) @ 25°C |
24A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
130mOhm @ 12A, 10V |
|
Vgs(th) (Max) @ Id |
5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
43 nC @ 10 V |
|
Vgs (Max) |
±25V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1870 pF @ 100 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
190W (Tc) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-220 |
|
Package / Case |
TO-220-3 |
|
Base Product Number |
STP33 |
Product datasheet
For more information, please download
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Original STP33N60DM2 Transistors MOSFET N-CH 600V 24A TO220 N-Channel 600 V 24A (Tc) 190W (Tc) Through Hole TO-220
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