Image shown is a representation only.

Exact specifications should be obtained from the product data sheet.

Hot sale original MRF6VP3450HR6 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET 4PIN

Manufacturer Product Number
MRF6VP3450HR6
Description

MRF6VP3450HR6 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET 4PIN

Package Condition
Tape & Reel (TR)
Datasheet
We are just Spot traders, Stockists, Sraders, PCBA&BOM service providers,Purchaser. All intellectual property rights of products on our website belong to the original factory! (In addition to ANSC's own customized products)

Product Details

Brief Description: The MRF6VP3450HR6 is a N-Channel LDMOS (Dual) RF MOSFET transistor . It is designed for enhancement mode operation and has a peak output power of 90W.

Features:
Frequency: 860MHz
Gain: 22.5dB
Power Output: 90W
Operating Temperature: -40°C to 225°C
Voltage Rated: 110V
Current - Test: 1.4A
Transistor Type: LDMOS (Dual)
FET Technology: Metal-Oxide Semiconductor
Configuration: Single
Case Connection: SOURCE
Terminal Form: FLAT
Surface Mount: YES
Application Grade: The MRF6VP3450HR6 is designed for high-power amplifier applications, specifically for use in RF systems operating at 860MHz.

Applications: * RF amplifiers * Power amplifiers * Wireless communication systems * Radar systems * Satellite communication systems

Additional Information: * The part is obsolete and not qualified. * It is ROHS3 compliant and has a factory lead time of 10 weeks. * The packaging is tape and reel (TR) with a package/case of NI-1230. * The transistor element material is silicon.

Product Description

Type# Description
PART# MRF6VP3450HR6
Manufacturer /
Package Description ROHS COMPLIANT, CASE 375D-05, NI-1230, 4 PIN
Pin Count 4
Manufacturer Package CASE 375D-05
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 110 V
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 225 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Actual image of the product 

MRF6VP3450HR6

Write your review

Hot sale original MRF6VP3450HR6 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET 4PIN

MRF6VP3450HR6 Transistors UHF BAND Si N-CHANNEL RF POWER MOSFET 4PIN

Write your review

Other Products In The same category:

8In stock:
Can ship immediately
QUANTITY
All prices are in USD

SEND
RFQ