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Hot sale Original NX1029X,115 Transistors Mosfet Array 60V, 50V 330mA, 170mA 500mW Surface Mount SOT-666 N and P-Channel
Original NX1029X,115 Transistors Mosfet Array 60V, 50V 330mA, 170mA 500mW Surface Mount SOT-666 N and P-Channel
Product details
Brief Description: The NX1029X,115 is a dual-channel logic-level gate N and P-channel MOSFET array from Nexperia USA Inc. It is designed for surface-mount applications and is suitable for use in automotive and other harsh environments.
Product Features
Dual-channel N and P-channel MOSFET array
Logic-level gate
Continuous drain current (ID) up to 170mA
Drain-to-source breakdown voltage of -50V
Drain-to-source voltage (Vdss) of 60V and 50V
Fall time (typ) of 25ns
Gate charge (Qg) of 0.35nC at 5V
Gate-to-source voltage (Vgs) of 20V
Input capacitance (Ciss) of 36pF at 25V
Maximum power dissipation of 500mW
Operating temperature range of -55°C to 150°C (TJ)
RoHS3 compliant
AEC-Q101 and TrenchMOS? certified for automotive applications
Application Grade: The NX1029X,115 is designed for use in automotive and
other harsh environments, making it suitable for applications such as:
- Power management and control
- Motor control
- Power conversion and conditioning
- Automotive electronics
Product Applications
Automotive power management and control systems
Industrial motor control and power conversion systems
Power supplies and converters
Automotive infotainment and telematics systems
Industrial automation and control systems
Note: The above information is based on the provided product parameters and is intended to provide a comprehensive description of the product. Please consult the manufacturer's datasheet or product documentation for more detailed information.
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - NX1029X,115 |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays |
Manufacturer |
Nexperia USA Inc. |
Series |
TrenchMOS™ |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Not For New Designs |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
60V, 50V |
Current - Continuous Drain (Id) @ 25°C |
330mA, 170mA |
Rds On (Max) @ Id, Vgs |
7.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
0.35nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds |
36pF @ 25V |
Power - Max |
500mW |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Grade |
Automotive |
Qualification |
AEC-Q101 |
Mounting Type |
Surface Mount |
Package / Case |
SOT-563, SOT-666 |
Supplier Device Package |
SOT-666 |
Base Product Number |
NX1029 |
Actual image of the product
Product datasheet
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