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Hot sale Original AUIRF7675M2TR Transistor MOSFET (Metal Oxide) N-Channel 150 V 4.4A (Ta), 18A (Tc) 2.7W (Ta) Surface Mount
Original AUIRF7675M2TR Transistor MOSFET N-Channel 150 V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DirectFET™ Isometric M2
Product Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1360pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.4A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [90A] according to its drain current.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.
Product Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 150V voltage
a threshold voltage of 4V
Product Applications
There are a lot of Infineon Technologies
AUIRF7675M2TR applications of single MOSFETs transistors.
· Synchronous Rectification for ATX 1 Server I Telecom PSU
· Motor drives and Uninterruptible Power Supplies
· Micro Solar Inverter
· DC/DC converters
· Power Tools
· Motor Drives and Uninterruptible Power Supples
· Synchronous Rectification
· Battery Protection Circuit
· Telecom 1 Sever Power Supplies
· Industrial Power Supplies
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - AUIRF7675M2TR |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
150 V |
Current - Continuous Drain (Id) @ 25°C |
4.4A (Ta), 18A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
56mOhm @ 11A, 10V |
Vgs(th) (Max) @ Id |
5V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs |
32 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1360 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
2.7W (Ta), 45W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DirectFET™ Isometric M2 |
Package / Case |
DirectFET™ Isometric M2 |
Base Product Number |
AUIRF7675 |
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Product datasheet
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