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Hot sale Original AUIRF7675M2TR Transistor MOSFET (Metal Oxide) N-Channel 150 V 4.4A (Ta), 18A (Tc) 2.7W (Ta) Surface Mount

Manufacturer
Manufacturer Product Number
AUIRF7675M2TR
Description

Original AUIRF7675M2TR Transistor MOSFET N-Channel 150 V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DirectFET™ Isometric M2

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Overview 

Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1360pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.4A amps.In this device, the drain-source breakdown voltage is 150V and VGS=150V, so the drain-source breakdown voltage is 150V in this case.A device can conduct a maximum continuous current of [90A] according to its drain current.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.

Product Features  

a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 150V voltage
a threshold voltage of 4V

Product Applications

There are a lot of Infineon Technologies
AUIRF7675M2TR applications of single MOSFETs transistors.

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

· Telecom 1 Sever Power Supplies

· Industrial Power Supplies

 

Product Description

Type

Description

ANSC PART#

ANSC - AUIRF7675M2TR

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Infineon Technologies

Series

HEXFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

150 V

Current - Continuous Drain (Id) @ 25°C

4.4A (Ta), 18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

56mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

32 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1360 pF @ 25 V

FET Feature

-

Power Dissipation (Max)

2.7W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DirectFET™ Isometric M2

Package / Case

DirectFET™ Isometric M2

Base Product Number

AUIRF7675

Actual image of the product 

38518.jpg

Product datasheet   

For more information, please download

   

AUIRF7675M2TR-2.png

AUIRF7675M2TR-3.png

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original AUIRF7675M2TR Transistor MOSFET (Metal Oxide) N-Channel 150 V 4.4A (Ta), 18A (Tc) 2.7W (Ta) Surface Mount

Original AUIRF7675M2TR Transistor MOSFET N-Channel 150 V 4.4A (Ta), 18A (Tc) 2.7W (Ta), 45W (Tc) Surface Mount DirectFET™ Isometric M2

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