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Original SCTH40N120G2V7AG N-Channel 1200 V 33A (Tc) 250W (Tc) Surface Mount H2PAK-7
Manufacturer Product Number
SCTH40N120G2V7AG
Description
SCTH40N120G2V7AG N-Channel 1200 V 33A (Tc) 250W (Tc) Surface Mount H2PAK-7
Package Condition
Tape & Reel (TR)
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Product Details
Features • AEC-Q101 qualified • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance Applications • Charger • Power supply for renewable energy systems • High frequency DC-DC converters Description This silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. |
Product Description
| Type | Description |
| PART# | SCTH40N120G2V7AG |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Original |
| Series | - |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Last Time Buy |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25掳C | 33A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1230 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 250W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | H2PAK-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Base Product Number | SCTH40 |
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SCTH40N120G2V7AG N-Channel 1200 V 33A (Tc) 250W (Tc) Surface Mount H2PAK-7
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