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Hot selling One stop supply of electronic components IPW65R041CFD N-Channel 650 V 68.5A (Tc) 500W (Tc) Through Hole PG-TO247-3
Trans MOSFET N-CH 650V 68.5A 3-Pin(3+Tab) TO-247 Tube
Product Descriptions
CoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by lnfineon Technologies. 650V COOlMOSTM CFD2 seriescombines the experience of the leading SJ MOSFET supplier with highclass innovation. The resulting devices provide all benefits of a fastswitching SJ MOSFET while offering an extremely fast and robust boddiode. This combination of extremely low switching, commutation andconduction losses together with highest robustness make especiallyresonant switching applications more reliable, more efficient, lighter anccooler.
Product Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Pb-free plating, Halogen free mold compound
• Qualified for industrial grade applications according to JEDEC(J-STD20 and JESD22)
Product Applications
• 650V COOlMOSTM CFD2 is especially suitable for resonant switching PWMstages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar
• Please note: For MOSFET paralleling the use of ferrite beads onthe gate or separate totem poles is generally recommended.
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-IPW65R041CFD |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | Infineon Technologies |
Series | CoolMOS™ CFD2 |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 68.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 41mOhm @ 33.1A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 3.3mA |
Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 100 V |
FET Feature | - |
Power Dissipation (Max) | 500W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |
Base Product Number | IPW65R041 |
Actual product photos
Product Data Book:
For more product information, please download the PDF
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