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Hot sale Original SI2323DS-T1-E3 Transistor MOSFET P-CH 20V P-Channel 20 V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Manufacturer
Manufacturer Product Number
SI2323DS-T1-E3
Description
Original SI2323DS-T1-E3 Transistor MOSFET P-CH 20V P-Channel 20 V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Overview
The maximum input capacitance of this device is 1020pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.7A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.
Product Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -20V voltage
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
Product Applications
SI2323DS-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV
Product Description
|
Type |
Description |
|---|---|
|
ANSC PART# |
ANSC - SI2323DS-T1-E3 |
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
- |
|
Series |
TrenchFET® |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Last Time Buy |
|
FET Type |
P-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
20 V |
|
Current - Continuous Drain (Id) @ 25°C |
3.7A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On) |
1.8V, 4.5V |
|
Rds On (Max) @ Id, Vgs |
39mOhm @ 4.7A, 4.5V |
|
Vgs(th) (Max) @ Id |
1V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
19 nC @ 4.5 V |
|
Vgs (Max) |
±8V |
|
Input Capacitance (Ciss) (Max) @ Vds |
1020 pF @ 10 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
750mW (Ta) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
SOT-23-3 (TO-236) |
|
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
|
Base Product Number |
SI2323 |
Actual image of the product
Product datasheet
For more information, please download
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Original SI2323DS-T1-E3 Transistor MOSFET P-CH 20V P-Channel 20 V 3.7A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)
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