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Hot sale Original IRFAE50 Power Field-Effect Transistor 7.1A I(D) 800V 1.4ohm 1-Element N-Channel Silicon

Manufacturer Product Number
IRFAE50
Description

IRFAE50 Power Field-Effect Transistor 7.1A I(D) 800V 1.4ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-204AA HERMETIC SEALED MODIFIED TO-3 2 PIN

Package Condition
Original
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Product Overview 

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 830 mJ.There is a peak drain current of 28 A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 800 V, it should remain above the 800 V level.

Product Features  

the avalanche energy rating (Eas) is 830 mJ
based on its rated peak drain current 28 A.

Product Applications

IRFAE50 applications of single MOSFETs transistors.

  • DC/DC converters

  • Power Tools

  • Motor Drives and Uninterruptible Power Supples

  • Synchronous Rectification

  • Battery Protection Circuit

  • Telecom 1 Sever Power Supplies

  • Industrial Power Supplies

  • PFC stages, hard switching PWM stages and resonant switching

  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

  • Lighting, Server, Telecom and UPS.


Product Description


Type#Description
ANSC PART#ANSC- IRFAE50
Ihs ManufacturerOriginal
Package DescriptionTO-3, 2 PIN
Avalanche Energy Rating (Eas)830 mJ
Case ConnectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min800 V
Drain Current-Max (ID)7.1 A
Drain-source On Resistance-Max1.4 Ω
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT MODE
Operating Temperature-Max150 °C
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Polarity/Channel TypeN-CHANNEL
Power Dissipation-Max (Abs)150 W
Pulsed Drain Current-Max (IDM)28 A
Qualification StatusNot Qualified
Surface MountNO
Terminal FinishTin/Lead (Sn/Pb)
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor ApplicationSWITCHING
Transistor Element MaterialSILICON


Actual image of the product 

IRFAE50

Product datasheet 

For more information, please download

 

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Payment&Transportation

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Official Certificate&Certificate

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Hot sale Original IRFAE50 Power Field-Effect Transistor 7.1A I(D) 800V 1.4ohm 1-Element N-Channel Silicon

IRFAE50 Power Field-Effect Transistor 7.1A I(D) 800V 1.4ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-204AA HERMETIC SEALED MODIFIED TO-3 2 PIN

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