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Hot sale Original RD15HVF1 Transistor RF POWER MOS FET Silicon MOSFET Power Transistor 175MHz 520MHz 15W MOS FET Silicon

Manufacturer

MITSUBISHI

Manufacturer Product Number

RD15HVF1

Description

Original RD15HVF1 RF Power Field-Effect Transistor 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET

Package Condition

Original

Product Details
Reviews

Description

RD15HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applications.

Product Features

High power and High Gain:

Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz

Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz

High Efficiency: 60%typ. on VHF Band

High Efficiency: 55%typ. on UHF Band

Product Applications

For output stage of high power amplifiers in VHF/UHF

Band mobile radio sets.

Product Description

ANSC PART#

ANSC- RD15HVF1

Part#

RD15HVF1

Type：

Electronic components

Manufactor

Original

new

Part Status

Active

Actual image of the product

Product datasheet

For more information, please download

RD15HVF1(1).png

RD15HVF1(2).png

RD15HVF1(3).png

RD15HVF1(3)-1.png

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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