| Manufacturer Product Number |
Manufacturer | Description | Package / Case | Package |
Price
|
Qty | Add to Cart | |
|---|---|---|---|---|---|---|---|---|
|
FS70UM-2 | MITSUBISHI | FS70UM-2 HIGH-SPEED SWITCHING USE Electric Semiconductor |
Original |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
||
|
RA45H7687M1 | MITSUBISHI | Original RA45H7687M1 Modules, high-frequency tubes Hot sale original |
TO-59 | Original |
One price, unlimited quantity
$22.75
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
RA30H1317M | MITSUBISHI | Brand new original RA30H1317M RF microwave amplifier communication module high frequency power amplifier tube |
TO-59 | original |
One price, unlimited quantity
$20.29
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
RD15HVF1-101 | MITSUBISHI | RD15HVF1-101 Transistor 175MHz to 520MHz 15W (NOS) |
TO220 | original |
One price, unlimited quantity
$0.72
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
RD15HVF1 | MITSUBISHI | Original RD15HVF1 RF Power Field-Effect Transistor 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET |
TO-220 | Original |
One price, unlimited quantity
$2.03
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
RD15HVF1-101 | MITSUBISHI | Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W. |
TO-220 | TUBE |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
CM300DY-24H | MITSUBISHI | CM300DY-24H IGBT MOD 1200V 300A 2100W IGBT Module Half Bridge 1200 V 300 A 2100 W Chassis Mount Module |
Module | Bulk |
One price, unlimited quantity
$84.06
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
CM300DU-24NFH | MITSUBISHI | Original CM300DU-24NFH IGBT Modules MOD 1200V 300A 1130W IGBT Module Half Bridge Chassis Mount Module |
MODULE | Bulk |
One price, unlimited quantity
$132.22
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
QM100DY-HK | MITSUBISHI | HIGH POWER SWITCHING USE INSULATED TYPE |
bag | / |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
FS70UM-2 HIGH-SPEED SWITCHING USE Electric Semiconductor
Original RA45H7687M1 Modules, high-frequency tubes Hot sale original
Brand new original RA30H1317M RF microwave amplifier communication module high frequency power amplifier tube
RD15HVF1-101 Transistor 175MHz to 520MHz 15W (NOS)
Original RD15HVF1 RF Power Field-Effect Transistor 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET
Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.
CM300DY-24H IGBT MOD 1200V 300A 2100W IGBT Module Half Bridge 1200 V 300 A 2100 W Chassis Mount Module
Original CM300DU-24NFH IGBT Modules MOD 1200V 300A 1130W IGBT Module Half Bridge Chassis Mount Module
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