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| Manufacturer Product Number |
Manufacturer | Description | Package / Case | Package |
Price
|
Qty | Add to Cart | |
|---|---|---|---|---|---|---|---|---|
|
RA30H1317M | MITSUBISHI | RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO |
original | original |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
No stock |
|
|
RD15HVF1-101 | MITSUBISHI | RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W (NOS) |
original | original |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
RD15HVF1 | MITSUBISHI | Original RD15HVF1 RF Power Field-Effect Transistor 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET |
TO-220 | Original |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
RD15HVF1-101 | MITSUBISHI | Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W. |
TO-220 | TUBE |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
CM300DY-24H | MITSUBISHI | CM300DY-24H IGBT MOD 1200V 300A 2100W IGBT Module Half Bridge 1200 V 300 A 2100 W Chassis Mount Module |
Module | Bulk |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
CM300DU-24NFH | MITSUBISHI | CM300DU-24NFH |
MODULE | Bulk |
One price, unlimited quantity
$125.92
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
|
|
M30833FJFP | MITSUBISHI | professional supply Integrated circuit IC one-stop sercvice BOM M30833FJFP |
QFP |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
No stock |
||
|
CM300DY-24H | MITSUBISHI | HIGH POWER SWITCHING USE INSULATED TYPEH |
bag |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
||
|
QM100DY-HK | MITSUBISHI | HIGH POWER SWITCHING USE INSULATED TYPE |
bag |
One price, unlimited quantity
$0.00
Estimated bulk discount
|
In stock Ship within 1 working day after receiving payment |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
RD15HVF1-101 Mitsubishi Transistor 175MHz to 520MHz 15W (NOS)
Original RD15HVF1 RF Power Field-Effect Transistor 1-Element Ultra High Frequency Band Silicon N-Channel Metal-oxide Semiconductor FET
Mitsubishi Electric’s lineup of High Power Si MOS FET discrete and module products are suitable for frequency ranges from 30MHz to 1GHz and output power levels up to 100W.
CM300DY-24H IGBT MOD 1200V 300A 2100W IGBT Module Half Bridge 1200 V 300 A 2100 W Chassis Mount Module
professional supply Integrated circuit IC one-stop sercvice BOM M30833FJFP
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