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Exact specifications should be obtained from the product data sheet.

BOM distribution service electronic components BFU590G NPN wideband silicon RF transistor

Manufacturer Product Number
BFU590G
Description

BOM distribution service electronic components BFU590G NPN wideband silicon RF transistor

Product descriptions from the supplier

Product Description
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Specification
Part#
BFU590G
Category
Discrete Semiconductor Products
Transistors - Bipolar (BJT) - RF
Mfr
NXP USA Inc.
Series
-
Package
Tape & Reel (TR)
Cut Tape (CT)
Product Status
Active
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
12V
Frequency - Transition
8.5GHz
Noise Figure (dB Typ @ f)
-
Gain
8dB
Power - Max
2W
DC Current Gain (hFE) (Min) @ Ic, Vce
60 @ 80mA, 8V
Current - Collector (Ic) (Max)
200mA
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Supplier Device Package
SC-73
Base Product Number
BFU590
Recommended by seller
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Product packaging
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Company Profile
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BOM distribution service electronic components BFU590G NPN wideband silicon RF transistor

BOM distribution service electronic components BFU590G NPN wideband silicon RF transistor

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