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You can contact me for the best price MW7IC2040N RF LDMOS Wideband Integrated Power Amplifiers Hot sale Original
Manufacturer Product Number
MW7IC2040N
Description
MW7IC2040N RF LDMOS Wideband Integrated Power Amplifiers Hot sale Original
Package Condition
Original
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Product Details
RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 1990 MHz. This multi-stage structure is rated for 24 to 32 Volt operation and covers all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ1 = 130 mA, IDQ2 = 330 mA, Pout = 4 Watts Avg., f = 1932.5, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 32 dB Power Added Efficiency — 17.5% ACPR @ 5 MHz Offset — -50 dBc in 3.84 MHz Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 50 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) • Stable into a 3:1 VSWR. All Spurs Below -60 dBc @ 100 mW to 40 Watts CW Pout. • Typical Pout @ 1 dB Compression Point 30 Watts CW GSM EDGE Application • Typical GSM EDGE Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 16 Watts Avg., 1805-1880 MHz Power Gain — 33 dB Power Added Efficiency — 35% Spectral Regrowth @ 400 kHz Offset = -62 dBc Spectral Regrowth @ 600 kHz Offset = -77 dBc EVM — 1.5% rms GSM Application • Typical GSM Performance: VDD = 28 Volts, IDQ1 = 90 mA, IDQ2 = 430 mA, Pout = 40 Watts CW, 1805-1880 MHz and 1930-1990 MHz Power Gain — 31 dB Power Added Efficiency — 50% Features • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters • On-Chip Matching (50 Ohm Input, DC Blocked, >3 Ohm Output) • Integrated Quiescent Current Temperature Compensation with Enable/ Disable Function (1) • Integrated ESD Protection • 225°C Capable Plastic Package • RoHS Compliant • In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. |
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