Image shown is a representation only.

Exact specifications should be obtained from the product data sheet.

One stop electronic component supply Original FMN2ET1TCD-25IH Stacked Multi-Chip Product 1.8V NAND Flash Memory and Mobile DDR2

Manufacturer Product Number
FMN2ET1TCD-25IH
Description

FMN2ET1TCD-25IH-Multiplexed, double data rate, command/address inputs;

commands entered on every CK edge

- Bidirectional/differential data strobe per byte of 

data(DQS/DQS#).

Package Condition
Tray

Product Features

1. MCP Features

• Operating Temperature Range

- Industrial Part : -40°C ~ 85°C

 NAND

• x8/x16 I/O BUS

— NAND Interface

— ADDRESS / DATA Multiplexing

• SUPPLY VOLTAGE

— VCC = 1.8 Volt core supplyvoltage

for Program, Erase and Readoperations

• MEMORY CELL ARRAY

— x8 : (2K + 64) bytes x 64 pages x 2048 blocks

— x16: (1K + 32) words x 64 pages x 2048 blocks

• PAGE READ / PROGRAM

— Synchronous Page Read Operation

— Random access : 25us (Max)

— Serial access : 45ns (1.8V)

— Page program time : 200us (Typ)

• ELECTRONIC SIGNATURE

— Manufacturer Code

— Device Code

• DATA RETENTION

— Cycling: 100K Program / Erase cycles

— Data retention: 10 Years(4bit/512byteECC)

• Package Type :

- 121-ball FBGA, 8.0x8.0mm2, 0.86T, 0.5mm BallPitch

- 162-ball FBGA, 11.5x13.0mm2, 1.0T, 0.5mm Ball Pitch

- 162-ball FBGA, 8.05x10.5mm2, 1.0T, 0.5mm Ball Pitch

- Lead & Halogen Free

 DRAM

- VDD2 = 1.14–1.30V

- VDDCA/VDDQ = 1.14–1.30V

- VDD1 = 1.70–1.95V

- Interface : HSUL_12

- Data width : x16, x32

- Clock frequency : 400 MHz

- Four-bit pre-fetch DDR architecture

- Eight internal banks for concurrentoperation

- Multiplexed, double data rate, command/address inputs;

commands entered on every CK edge

- Bidirectional/differential data strobe per byte of 

data(DQS/DQS#).

- DM masks write date at the both rising and falling edge 

of the data strobe

- Programmable READ and WRITE latencies(RL/WL)

- Programmable burst lengths: 4, 8, or 16

- Auto refresh and self refresh supported

- All bank auto refresh and per bank auto refresh supported

- Clock stop capability

• Low Power Features

- Low voltage power supply.

- Auto TCSR (Temperature Compensated Self Refresh).

- PASR (Partial Array Self Refresh) power-saving mode.

- DPD (Deep Power Down) Mode.

- DS (Driver Strength) Control.

  Specifications

Attribute Attribute value
ANSM-Part# ANSM-FMN2ET1TCD-25IH
Type: LPDDR2
Manufactor Dosilicon
DC Standard
Describe NEW
Supplier Device Packaging FBGA162
Package TRAY
Density 2Gb
Voltage (V) 1.8
Speed (MHz/CLK) 400MHz
Temp.Range -40℃~85℃

Actual product photos

FBGA162

Product Data Book:

1702720587a778d0.png

17027205875206e8.png

1702720587da1f72.png

17027205872bccf2.png

1702720587e6724e.png

For more product information, please download the PDF

Payment&Transportation

详情8.1

Official Certificate&Certificate

详情页3.1

Multiple product supply

详情5.1

Company office environment

详情6.1

Warehouse Real Shot

170019007688325e.png

Standard packaging

详情9

We also provide :

Part No Manufacturer Date Code Quantity Description
LM22676ADJ NS 19+ 250 SOP8
TPS562201DDCR TI 22+ 795500 SOT23-6
NJG1806K75 JRC 22+ 500000 DFN6
TLV74318PDQNR TI 22+ 402000 X2SON-4
NJG1801K75 JRC 22+ 300000 SMD
NJG1804K64 JRC 22+ 300000 DFN8
LM27761DSGR TI 22+ 151000 WSON8
TLV62565DBVR TI 22+ 138000 SOT23-5
TPS613222ADBVR TI 22+ 108000 SOT23-5
LNK625DG-TL POWER 22+ 100000 SOP-8
OPA4322AIPWR TI 22+ 100000 TSSOP14
TLV75528PDRVR TI 22+ 99000 WSON-6
TPS7A2025PDQNR TI 22+ 78500 X2SON-4
TLV62568DBVR TI 22+ 72000 SOT23-5
STM32L051K8U6TR ST 22+ 60000 QFN32
SKY66421-11 SKYWORKS 22+ 56500 QFN16
TPS7A1111PDRVR TI 22+ 54000 WSON6
TLV62569PDDCR TI 22+ 52000 SOT23-6
TLV62569DBVR TI 22+ 48000 SOT23-5
TPS23753APWR TI 22+ 40000 TSSOP14
NB691GG-Z MPS 22+ 30000 QFN
SN74AHC1G02DBVR TI 22+ 27939 SOT-23
TPS63000DRCR TI 22+ 23238 VSON10
TLV75533PDRVR TI 22+ 21500 WSON6
NB687BGQ-Z MPS 22+ 20000 QFN
A3916GESTR-T-1 ALLEGRO 22+ 17150 QFN-20
TPS62135RGXR TI 22+ 15000 VQFN11
TLE2022AMDR TI 0803+ 12500 SOP8
TPS23756PWPR TI 22+ 12000 HTSSOP-20

Write your review

One stop electronic component supply Original FMN2ET1TCD-25IH Stacked Multi-Chip Product 1.8V NAND Flash Memory and Mobile DDR2

FMN2ET1TCD-25IH-Multiplexed, double data rate, command/address inputs;

commands entered on every CK edge

- Bidirectional/differential data strobe per byte of 

data(DQS/DQS#).

Write your review

Other Products In The same category:

1000In stock:
Can ship immediately
QUANTITY
All prices are in USD

SEND
RFQ