Hot selling product original stock DS35M2GB-IB 3.3V/1.8V x1/x2/x4 2G-bit SPI NAND FLASH WSON8

Product Features

■ Serial Peripheral Interface

－ Mode 0 and Mode 3

■ Standard, Dual, Quad SPI

－ Standard SPI: SCLK, CS#, SI, SO 

－ Dual SPI: SCLK, CS#, SIO0, SIO1

－ Quad SPI: SCLK, CS#, SIO0, SIO1, SIO2, SIO3

■ SUPPLY VOLTAGE

－ VCC = 1.8/3.3 Volt core supply voltage for 

Program, Erase and Read operations

■ PAGE READ / PROGRAM

－ (2048+128 spare) byte

－ Random access: 25us (w/o ECC), 

130us(w/ ECC)

－ Serial access: 83MHz (1.8V)

104MHz (3.3V)

－ Page program time: 300us (Typ)

■ FAST BLOCK ERASE

－ Block size: (128K + 8K) bytes 

－ Block erase time: 2ms (Typ)

■ MEMORY CELL ARRAY

－ (2K + 128) bytes x 64 pages x 2048 blocks

■ ELECTRONIC SIGNATURE

－ Manufacturer Code

－ Device Code

■ STATUS REGISTER

■ HARDWARE DATA PROTECTION

－ Enable/Disable protection with WP# Pin

－ Top or Bottom, Block selection combination

■ DATA RETENTION

－ Max cycling: 60K Program / Erase cycles

－ Data retention: 10 Years (8bit/512byte ECC)

－ Internal ECC can be enabled (8bit ECC)

－ Block zero is a valid block and will be valid for at 

least 1K program-erase cycles with ECC

  Specifications

Actual product photos

Product Data Book：

For more product information, please download the PDF

Payment&Transportation

Official Certificate&Certificate

Multiple product supply

Company office environment

Warehouse Real Shot

Standard packaging

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