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Hot selling One stop electronic component supply JS28F256P33B95 FLASH - NOR Memory IC 256Mbit Parallel 40 MHz 95 ns 56-TSOP

Manufacturer Product Number
JS28F256P33B95
Description

IC FLASH 256MBIT PAR 56TSOP

Package Condition
TRAY
Datasheet

Product Benefits and Features

• High-performance read, program, and erase

– 106ns initial read access

– 108 MHz with zero wait-state synchronous burst reads: 7ns clock-to-data output

– 133 MHz with zero wait-state synchronous burst reads: 6ns clock-to-data output

– 8-, 16-, and continuous-word synchronous-burst reads

– Programmable WAIT configuration

– Customer-configurable output driver impedance

– Buffered programming: 2.0 μs/word (TYP), 512Mb

– Block erase: 0.9s per block (TYP)

– 20μs (TYP) program/erase suspend

• Architecture

– 16-bit wide data bus

– Multilevel cell technology

– Symmetrically-blocked array architecture

– 256KB erase blocks

– 1Gb device: Eight 128Mb partitions

– 512Mb device: Eight 64Mb partitions

– 256Mb device: Eight 32Mb partitions

– Status register for partition/device status

– Blank check feature

• Quality and reliability

– Automotive temperature: –40°C to +105°C (Grade 2 AEC-Q100)

– Minimum 100,000 ERASE cycles per block

– More than 20 years data retention

– 65nm process technology

• Power

– Core voltage: 1.7– 2.0V

– I/O voltage: 1.7–2.0V

– Standby current: 60μA (TYP) for 512Mb

– Automatic power savings mode

– 16-word synchronous-burst read current: 23mA (TYP) @ 108 MHz; 24mA (TYP) @ 133 MHz

• Software

– Micron® Flash data integrator (FDI) optimized

– Basic command set (BCS) and extended command set (ECS) compatible

– Common Flash interface (CFI) capable

• Security

– One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits

– Absolute write protection: VPP = GND

– Power-transition erase/program lockout

– Individual zero latency block locking

– Individual block lock-down

• Density and packaging

– 256Mb, 512Mb, and 1Gb

– Address-data multiplexed interface

– 64-Ball TBGA

Specifications

Attribute Attribute value
ANSM-Part# ANSM-JS28F256P33B95
Category Integrated Circuits (ICs)
Memory
Memory
Mfr Micron Technology Inc.
Series StrataFlash™
Package Tray
Product Status Obsolete
DigiKey Programmable Not Verified
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NOR
Memory Size 256Mbit
Memory Organization 16M x 16
Memory Interface Parallel
Clock Frequency 40 MHz
Write Cycle Time - Word, Page 95ns
Access Time 95 ns
Voltage - Supply 2.3V ~ 3.6V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package 56-TSOP
Base Product Number JS28F256P33

Actual product photos

JS28F256P33B95   2

Product Data Book:

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For more product information, please download the PDF

Payment&Transportatio

详情8.1

Official Certificate&Certificate

详情页3.1

Multiple product supply

详情5.1

Company office environment

详情6.1

Warehouse Real Shot

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Standard packaging

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Hot selling One stop electronic component supply JS28F256P33B95 FLASH - NOR Memory IC 256Mbit Parallel 40 MHz 95 ns 56-TSOP

IC FLASH 256MBIT PAR 56TSOP

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