Professional supply Integrated circuit IC one-stop sercvice BOM 29LV800CBXBI-70G FLASH - NOR Memory IC 8Mbit Parallel 70 ns

Product Descriptions

The MX29LV800C T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits. MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory. The MX29LV800C T/B is packaged in 44-pin SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29LV800C T/B offers access time as fast as 45ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention, the MX29LV800C T/B has separate chip enable (CE#) and output enable (OE#) controls.

MXIC's Flash memories augment EPROM functionality with in-circuit electrical erasure and programming. The MX29LV800C T/B uses a command register to manage this functionality. The command register allows for 100%

TTL level control inputs and fixed power supply levels during erase and programming, while maintaining maximum EPROM compatibility.

MXIC Flash technology reliably stores memory contents even after 100,000 erase and program cycles. The MXIC cell is designed to optimize the erase and programming mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields for erase and program operations produces reliable cycling. The MX29LV800C T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto

Program/Erase algorithms.

The highest degree of latch-up protection is achieved with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamperes on address and data pin from -1V to VCC + 1V

Product Features

• Extended single - supply voltage range 2.7V to 3.6V

• 1,048,576 x 8/524,288 x 16 switchable

• Single power supply operation

- 3.0V only operation for read, erase and program operation

• Fast access time: 45R/55R/70/90ns

• Low power consumption

- 30mA maximum active current

- 0.2uA typical standby current

• Command register architecture

- Byte/word Programming (9us/11us typical)

- Sector Erase (Sector structure 16K-Bytex1,8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)

• Fully compatible with MX29LV800BT/BB device

• Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with Erase Suspend capability

- Automatically program and verify data at specified address

• Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,or program data to, any sector that is not being erased, then resumes the erase

• Status Reply

- Data# polling & Toggle bit for detection of program and erase operation completion

• Ready/Busy# pin (RY/BY#)

- Provides a hardware method of detecting program or erase operation completion

• Sector protection

- Hardware method to disable any combination of sectors from program or erase operations

- Temporary sector unprotected allows code changes in previously locked sectors.

• CFI (Common Flash Interface) compliant

- Flash device parameters stored on the device and provide the host system to access

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

- T = Top Boot Sector

- B = Bottom Boot Sector

• Package type:

- 44-pin SOP

- 48-pin TSOP

- 48-ball CSP (6 x 8mm)

- 48-ball CSP (4 x 6mm)

- All Pb-free devices are RoHS Compliant

• Compatibility with JEDEC standard

- Pinout and software compatible with single-power supply Flash

• 10 years data retention.

  Specifications

Actual product photos

Product Data Book：

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Official Certificate&Certificate

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