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Original H5DU2562GTR-E3C IC DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH,TSOP2-66
H5DU2562GTR-E3C IC DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 X 0.875 INCH, 0.65 MM PITCH,TSOP2-66
Product Details
DESCRIPTION
The H5DU2582GTR and H5DU2562GTR are a 268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
This Hynix 256Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
Product Description
ANSC PART# |
ANSC- H5DU2562GTR-E3C |
Part# |
H5DU2562GTR-E3C |
Type: |
Integrated Circuits |
Manufactor |
- |
DC |
new |
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