Hot sale original electronics MBM29LV160TE-70PFTN IC FLASH 4MB TSOP FLASH - NOR Memory IC 4Mbit Parallel 70 ns 48-TSOP

Product Details

MBM29LV160TE-70 Product details  

■ GENERAL DESCRIPTION

The MBM29LV160TE/BE is a 16M-bit, 3.0 V-only Flash memory organized as 2M bytes 

of 8 bits each or 1M words of 16 bits each. 

The MBM29LV160TE/BE is offered in a 48-pin TSOP (I), 48-pin CSOP and 

48-ball FBGA packages. 

The device is designed to be programmed in-system with the standard system 3.0 V VCC supply.

 12.0 V VPP and 5.0 V VCC are not required for write or erase operations. 

The device can also be reprogrammed in standard EPROM programmers.

■ FEATURES

• 0.23 µm Process Technology

• Single 3.0 V read, program and erase

   Minimizes system level power requirements

• Compatible with JEDEC-standard commands

   Uses same software commands as E2PROMs

• Compatible with JEDEC-standard world-wide pinouts

   48-pin TSOP (I) (Package suffix: TN-Normal Bend Type, TR-Reversed Bend Type)

   48-pin CSOP (Package suffix: PCV)

   48-ball FBGA (Package suffix: PBT)

• Minimum 100,000 program/erase cycles

• High performance

   70 ns maximum access time

• Sector erase architecture

   One 8K word, two 4K words, one 16K word, and thirty-one 32K words sectors in word mode

   One 16K byte, two 8K bytes, one 32K byte, and thirty-one 64K bytes sectors in byte mode

   Any combination of sectors can be concurrently erased. Also supports full chip erase

• Boot Code Sector Architecture

   T = Top sector

   B = Bottom sector

• Embedded EraseTM Algorithms

   Automatically pre-programs and erases the chip or any sector

• Embedded ProgramTM Algorithms

   Automatically programs and verifies data at specified address

• Data Polling and Toggle Bit feature for detection of program or erase cycle completion

• Ready/Busy output (RY/BY)

   Hardware method for detection of program or erase cycle completion

• Automatic sleep mode

   When addresses remain stable, automatically switches themselves to low power mode

• Low VCC write inhibit ≤ 2.5 V

• Erase Suspend/Resume

   Suspends the erase operation to allow a read data and/or program in another

sector within the same device

• Sector protection

   Hardware method disables any combination of sectors from program or erase operations

• Sector Protection Set function by Extended sector Protection command

• Fast Programming Function by Extended command

• Temporary sector unprotection

   Temporary sector unprotection via the RESET pin

• In accordance with CFI (Common Flash Memory Interface)

Product Description

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