Hot-selling and scarce JS28F512M29EWHA Parallel NOR Flash Embedded Memory IC TSOP56 spot stock

​Product Features

• 2Gb = stacked device (two 1Gb die)

• Supply voltage

– VCC = 2.7–3.6V (program, erase, read)

– VCCQ = 1.65–3.6V (I/O buffers)

• Asynchronous random/page read

– Page size: 16 words or 32 bytes

– Page access: 25ns

– Random access: 100ns (Fortified BGA); 110ns (TSOP)

• Buffer program: 512-word program buffer

• Program time

– 0.88µs per byte (1.14 MB/s) TYP when using full 512-word buffer size in buffer program

• Memory organization

– Uniform blocks: 128-Kbytes or 64-Kwords each

• Program/erase controller

– Embedded byte/word program algorithms

• Program/erase suspend and resume capability

– Read from any block during a PROGRAM SUSPEND operation

– Read or program another block during an ERASE SUSPEND operation

• BLANK CHECK operation to verify an erased block

• Unlock bypass, block erase, chip erase, and write to buffer capability

– Fast buffered/batch programming

– Fast block/chip erase

• VPP/WP# pin protection

– Protects first or last block regardless of block protection settings

• Software protection

– Volatile protection

– Nonvolatile protection

– Password protection

– Password access

• Extended memory block

– 128-word (256-byte) block for permanent, secure identification

– Programmed or locked at the factory or by the customer

• Low power consumption: Standby mode

• JESD47H-compliant

– 100,000 minimum ERASE cycles per block

– Data retention: 20 years (TYP)

• 65nm multilevel cell (MLC) process technology

• Fortified BGA and TSOP packages

• Green packages available

– RoHS-compliant

– Halogen-free

• Operating temperature

– Ambient: –40°C to +85°C

Product Specification

Product Photos

For more product information, please download the PDF