Hot-selling and scarce AT45DB041B-TC FLASH Memory IC 4Mbit SPI 20 MHz 28-TSOP spot stock

Product Descriptions

The AT45DB041B is an SPI compatible serial interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. Its 4,325,376 bits of memory are organized as 2048 pages of 264 bytes each. In addition to the main memory, the AT45DB041B also contains two SRAM data buffers of 264 bytes each.

The buffers allow receiving of data while a page in the main memory is being reprogrammed, as well as reading or writing a continuous data stream. EEPROM emulation(bit or byte alterability) is easily handled with a self-contained three step Read-ModifyWrite operation. Unlike conventional Flash memories that are accessed randomly with multiple address lines and a parallel interface, the DataFlash uses a SPI serial interface to sequentially access its data. DataFlash supports SPI mode 0 and mode 3. The simple serial interface facilitates hardware layout, increases system reliability, minimizes switching noise, and reduces package size and active pin count. The device is optimized for use in many commercial and industrial applications where high density, low pin count, low voltage, and low power are essential. The device operates at clock frequencies up to 20 MHz with a typical active read current consumption of 4 mA.

To allow for simple in-system reprogrammability, the AT45DB041B does not require high input voltages for programming.The device operates from a single power supply,2.5V to 3.6V or 2.7V to 3.6V, for both the program and read operations. The AT45DB041B is enabled through the chip select pin (CS) and accessed via a threewire interface consisting of the Serial Input (SI), Serial Output (SO), and the Serial Clock (SCK).

Product Features

•  Single 2.5V - 3.6V or 2.7V - 3.6V Supply

•  Serial Peripheral Interface (SPI) Compatible

•  20 MHz Max Clock Frequency

•  Page Program Operation

– Single Cycle Reprogram (Erase and Program)

– 2048 Pages (264 Bytes/Page) Main Memory

•  Supports Page and Block Erase Operations

•  Two 264-byte SRAM Data Buffers – Allows Receiving of Data while Reprogramming the Flash Memory Array

•  Continuous Read Capability through Entire Array

– Ideal for Code Shadowing Applications

•  Low Power Dissipation

– 4 mA Active Read Current Typical

– 2 µA CMOS Standby Current Typical

•  Hardware Data Protection Feature

•  5.0V-tolerant Inputs: SI, SCK, CS, RESET, and WP Pins

•  Commercial and Industrial Temperature Ranges

•  Green (Pb/Halide-free/RoHS Compliant) Package Options

Product Specification

Product Photos

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