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Original supply CY14V116N-BZ30XI NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 30 ns 165-FBGA
NVRAM NVSRAM Parallel 16Mbit 3V/3.3V 165-Pin FBGA Tray
Product Details
The Cypress CY14V116N is a fast SRAM, with a nonvolatileelement in each memory cell. The memory is organized as1024K words of 16 bits each. The embedded nonvolatileelements incorporate QuantumTrap technology, producing theworld's most reliable nonvolatile memory. The SRAM can beread and written an infinite number of times. The nonvolatile dataresiding in the nonvolatile elements do not change when data iswritten to the SRAM. Data transfers from the SRAM to thenonvolatile elements (the STORE operation) takes placeautomatically at power-down. On power-up, data is restored tothe SRAM (the RECALL operation) from the nonvolatile memory.Both the STORE and RECALL operations are also availableunder software control.
Products Features
16-Mbit nonvolatile static random access memory (nVSRAM)
Specifications
Attribute
|
Attribute value
|
ANSM-Part#
|
ANSM-CY14V116N-BZ30
|
Category
|
Integrated Circuits (ICs)
|
Memory
|
|
Memory
|
|
Mfr
|
CYPRESS
|
Series
|
-
|
Package
|
Tray
|
Product Status
|
Active
|
DigiKey Programmable
|
Not Verified
|
Memory Type
|
Non-Volatile
|
Memory Format
|
NVSRAM
|
Technology
|
NVSRAM (Non-Volatile SRAM)
|
Memory Size
|
16Mbit
|
Memory Organization
|
1M x 16
|
Memory Interface
|
Parallel
|
Write Cycle Time - Word, Page
|
30ns
|
Access Time
|
30 ns
|
Voltage - Supply
|
1.7V ~ 3.6V
|
Operating Temperature
|
-40°C ~ 85°C (TA)
|
Mounting Type
|
Surface Mount
|
Package / Case
|
165-LBGA
|
Supplier Device Package
|
165-FBGA (15x17)
|
Base Product Number
|
CY14V116
|
Actual product photos
Product Data Book:
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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