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Original supply CY14V116N-BZ30XI NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 30 ns 165-FBGA

Manufacturer
Manufacturer Product Number
CY14V116N-BZ30XI
Description

NVRAM NVSRAM Parallel 16Mbit 3V/3.3V 165-Pin FBGA Tray

Package Condition
Tray
Datasheet

Product Details

The Cypress CY14V116N is a fast SRAM, with a nonvolatileelement in each memory cell. The memory is organized as1024K words of 16 bits each. The embedded nonvolatileelements incorporate QuantumTrap technology, producing theworld's most reliable nonvolatile memory. The SRAM can beread and written an infinite number of times. The nonvolatile dataresiding in the nonvolatile elements do not change when data iswritten to the SRAM. Data transfers from the SRAM to thenonvolatile elements (the STORE operation) takes placeautomatically at power-down. On power-up, data is restored tothe SRAM (the RECALL operation) from the nonvolatile memory.Both the STORE and RECALL operations are also availableunder software control.

Products Features

16-Mbit nonvolatile static random access memory (nVSRAM)

•30-ns and 45-ns access times
•Logically organized as 1024K x 16
•Hands-off automatic STORE on power-down with only asmall capacitor
•STORE to QuantumTrap nonvolatile elements is initiated bysoftware, device pin, or AutoStore on power-down
•RECALL to SRAM initiated by software or power-up
High reliability
•Infinite read, write, and RECALL cycles
•1 million STORE cycles to QuantumTrap
•Data retention: 20 years
Sleep mode operation
Low power consumption
•Active current of 75 mA at 45 ns
•Standby mode current of 650 uA
•Sleep mode current of 10 uA
Operating voltage
•Core Vcc = 2.7 V to 3.6 V; I/O VccQ = 1.65 V to 1.95 V
•Industrial temperature: -40℃ to +85℃
•165-ball fine-pitch ball grid array (FBGA) package
•Restriction of hazardous substances (RoHS) compliant

Specifications

Attribute
Attribute value
ANSM-Part#
ANSM-CY14V116N-BZ30
Category
Integrated Circuits (ICs)
Memory
Memory
Mfr
CYPRESS
Series
-
Package
Tray
Product Status
Active
DigiKey Programmable
Not Verified
Memory Type
Non-Volatile
Memory Format
NVSRAM
Technology
NVSRAM (Non-Volatile SRAM)
Memory Size
16Mbit
Memory Organization
1M x 16
Memory Interface
Parallel
Write Cycle Time - Word, Page
30ns
Access Time
30 ns
Voltage - Supply
1.7V ~ 3.6V
Operating Temperature
-40°C ~ 85°C (TA)
Mounting Type
Surface Mount
Package / Case
165-LBGA
Supplier Device Package
165-FBGA (15x17)
Base Product Number
CY14V116

Actual product photos

Product Data Book:

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For more product information, please download the PDF

Payment&Transportation

详情8.1

Official Certificate&Certificate

详情页3.1

Multiple product supply

详情5.1

Company office environment

详情6.1

Warehouse Real Shot

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Standard packaging

详情9

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Original supply CY14V116N-BZ30XI NVSRAM (Non-Volatile SRAM) Memory IC 16Mbit Parallel 30 ns 165-FBGA

NVRAM NVSRAM Parallel 16Mbit 3V/3.3V 165-Pin FBGA Tray

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