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Professional supply Integrated circuit IC MT47H32M16HR-25E:G SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 84-FBGA
IC DRAM 512MBIT PARALLEL 84FBGA
Product Features
• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 4 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 t CK
• Selectable burst lengths: 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification
Specifications
Attribute |
Attribute value |
ANSM-Part# |
ANSM-MT47H32M16HR-25E:G |
Category |
Integrated Circuits (ICs) |
Memory |
|
Memory |
|
Mfr |
Micron Technology Inc. |
Series |
- |
Package |
Tray |
Product Status |
Obsolete |
DigiKey Programmable |
Not Verified |
Memory Type |
Volatile |
Memory Format |
DRAM |
Technology |
SDRAM - DDR2 |
Memory Size |
512Mbit |
Memory Organization |
32M x 16 |
Memory Interface |
Parallel |
Clock Frequency |
400 MHz |
Write Cycle Time - Word, Page |
15ns |
Access Time |
400 ps |
Voltage - Supply |
1.7V ~ 1.9V |
Operating Temperature |
0°C ~ 85°C (TC) |
Mounting Type |
Surface Mount |
Package / Case |
84-TFBGA |
Supplier Device Package |
84-FBGA (8x12.5) |
Base Product Number |
MT47H32M16 |
Actual product photos
Product Data Book:
For more product information, please download the PDF
Payment&Transportation
Official Certificate&Certificate
Multiple product supply
Company office environment
Warehouse Real Shot
Standard packaging
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