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Hot-selling and scarce MT29F8G08ABABAWP-IT:B NAND Memory IC 8Gbit Parallel 48-TSOP I spot stock
MT29F8G08ABABAWP-IT:B NAND Memory IC 8Gbit Parallel 48-TSOP I spot stock
Product Features
• Open NAND Flash Interface (ONFI) 1.0-compliant1
• Single-level cell (SLC) technology
• Organization
– Page size x8: 2112 bytes (2048 + 64 bytes)
– Page size x16: 1056 words (1024 + 32 words)
– Block size: 64 pages (128K + 4K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 4Gb: 4096 blocks; 8Gb: 8192 blocks 16Gb: 16,384 blocks
• Asynchronous I/O performance
– tRC/tWC: 20ns (3.3V), 25ns (1.8V)
• Array performance
– Read page: 25µs 3
– Program page: 200µs (TYP: 1.8V, 3.3V)3
– Erase block: 700µs (TYP)
• Command set: ONFI NAND Flash Protocol
• Advanced command set
– Program page cache mode4
– Read page cache mode 4
– One-time programmable (OTP) mode
– Two-plane commands 4
– Interleaved die (LUN) operations
– Read unique ID
– Block lock (1.8V only)
– Internal data move
• Operation status byte provides software method for detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Ready/Busy# (R/B#) signal provides a hardware method of detecting operation completion
• WP# signal: Write protect entire device
Product Specifications
| Attribute | Attribute value |
| ANSM-Part# | ANSM-MT29F8G08ABABAWP-IT:B |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | - |
| Packaging | Tray |
| Part Status | Obsolete |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 8Gbit |
| Memory Organization | 1G x 8 |
| Memory Interface | Parallel |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | MT29F8G08 |
Product Photos



For more product information, please download the PDF
WhenCE is HIGH (deselected),the device assumes a standby mode at which the power dissipation can be reduced down to250 µW (typical) with CMOS input levels.