Hot-selling and scarce CY62167DV30LL-70BVI 16-Mbit (1 M × 16) Static RAM BGA spot stock

Product Descriptions

The CY62167DV30 is a high-performance CMOS static RAM organized  as   1M  words  by   16-bits.  This  device  features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life(MoBL) in portable applications such as cellular telephones.The device also has an automatic power-down feature that significantly reduces power consumption  by 99% when addresses are  not toggling. The device can also be put into standby mode when deselected (CE ₁ HIGH  or  CE 2  LOW  or  both  BHE  and  BLE  are  HIGH). The input/output   pins   (I/O 0    through   I/O 15)   are   placed   in   a high-impedance  state  when:  deselected  (CE ₁  HIGH  or  CE 2 LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE , BLE HIGH), or during a Write operation (CE ₁ LOW, CE 2 HIGH and WE LOW).

Writing to the device is accomplished by taking Chip Enables(CE ₁ LOW and CE₂ HIGH) and Write Enable (WE) input LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O 0 through I/O 7),is written into the location specified on the address pins (A 0 through A 19). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O 8 through I/O 15) is written into the location specified on the address pins (A 0through A 19).

Reading from the device is accomplished by taking Chip Enables(CE ₁ LOW and CE 2 HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins appear on I/O 0 to I/O 7 . If Byte High Enable (BHE) is LOW,then data from memory appear on I/O 8to I/O 15 . See the truth  table  at  the  back  of  this  data  sheet  for  a  complete description of Read and Write modes.

Product Features

■ Thin small outline package (TSOP-I) configurable as

1 M × 16 or as 2 M × 8 SRAM

■ Wide voltage range: 2.2 V–3 .6 V

■ Ultra-low active power:

Typical active current: 2 mA at f = 1 MHz

■ Ultra-low standby power

■ Easy memory expansion with CE 1 , CE 2 and OE features

■ Automatic power-down when deselected

■ Complementary metal oxide semiconductor (CMOS) for optimum speed / power

■ Available in Pb-free and non Pb-free 48-ball very fine-pitch ball grid array (VFBGA) and 48-pin TSOP I package

Product Specification

Product Photos

For more product information, please download the PDF