Hot-selling and scarce MT28F640J3FS-115ET Q-FLASHTM MEMORY IC BGA spot stock

Product Features

Memory Organization

• x8/x16

• One hundred twenty-eight 128KB erase blocks (128Mb)

• Sixty-four 128KB erase blocks (64Mb)

• Thirty-two 128KB erase blocks (32Mb)

VCC, VCCQ, and VPEN voltages:

• 2.7V to 3.6V VCC operation

• 2.7V to 3.6V application programming

Interface Asynchronous Page Mode Reads:

• 120ns/25ns read access time (128Mb)

• 115ns/25ns read access time (64Mb)

• 110ns/25ns read access time (32Mb)

Manufacturer’s Identification Code (ManID)

• Micron® (0x2Ch)

• Intel® (0x89h)

Industry-standard pinout

Inputs and outputs are fully TTL-compatible

Common Flash Interface (CFI) and

Scalable Command Set

Automatic write and erase algorithm

5.6µs-per-byte effective programming time using write buffer

128-bit protection register

• 64-bit unique device identifier

• 64-bit user-programmable OTP cells

Enhanced data protection feature with VPEN = VSS

• Flexible sector locking

• Sector erase/program lockout during power

transition

Security block features

Contact factory for availability

100,000 ERASE cycles per block

Automatic suspend options:

• Block Erase Suspend-to-Read

• Block Erase Suspend-to-Program

• Program Suspend-to-Read

Product Photos

For more product information, please download the PDF