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Hot sale Original CY7C109B-20VI Memory IC Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, SOJ-32
Manufacturer Product Number
CY7C109B-20VI
Description
Original CY7C109B-20VI Memory IC Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, SOJ-32
Package Condition
Original
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Product Details
| Functional Description The CY7C109B / CY7C1009B is a high-performance CMOS static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE1), an active HIGH Chip Enable (CE2), an active LOW Output Enable (OE), and three-state drivers. Writing to the device is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW and Chip Enable Two (CE2) input HIGH. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A16). Features • High speed — tAA = 12 ns • Low active power — 495 mW (max. 12 ns) • Low CMOS standby power — 55 mW (max.) 4 mW • 2.0V Data Retention • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2, and OE options |
Product Description
| Type# | Description |
| ANSC PART# | ANSC- CY7C109B-20VI |
| Ihs Manufacturer | Original |
| Part Package Code | SOJ |
| Package Description | 0.400 INCH, SOJ-32 |
| Pin Count | 32 |
| Access Time-Max | 20 ns |
| I/O Type | COMMON |
| JESD-30 Code | R-PDSO-J32 |
| JESD-609 Code | e0 |
| Length | 20.955 mm |
| Memory Density | 1048576 bit |
| Memory IC Type | STANDARD SRAM |
| Memory Width | 8 |
| Moisture Sensitivity Level | 2 |
| Number of Functions | 1 |
| Number of Terminals | 32 |
| Number of Words | 131072 words |
| Number of Words Code | 128000 |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 85 °C |
| Operating Temperature-Min | -40 °C |
| Organization | 128KX8 |
| Output Characteristics | 3-STATE |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | SOJ |
| Package Equivalence Code | SOJ32,.44 |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | 225 |
| Qualification Status | Not Qualified |
| Seated Height-Max | 3.7592 mm |
| Standby Current-Max | 0.01 A |
| Standby Voltage-Min | 4.5 V |
| Supply Current-Max | 0.075 mA |
| Supply Voltage-Max (Vsup) | 5.5 V |
| Supply Voltage-Min (Vsup) | 4.5 V |
| Supply Voltage-Nom (Vsup) | 5 V |
| Surface Mount | YES |
| Technology | CMOS |
| Temperature Grade | INDUSTRIAL |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Terminal Form | J BEND |
| Terminal Pitch | 1.27 mm |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Width | 10.16 mm |
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Original CY7C109B-20VI Memory IC Standard SRAM, 128KX8, 20ns, CMOS, PDSO32, 0.400 INCH, SOJ-32
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