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Professional supply S29GL01GP11TFI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
NOR Flash Parallel 3V/3.3V 1G-bit 128M x 8/64M x 16 110ns 56-Pin TSOP Tray
Product Descriptions
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
Product Distinctive Characteristics
• Single 3V read/program/erase (2.7-3.6 V)
• Enhanced VersatileI/O™ control
– All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC
• 90 nm MirrorBit process technology
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall programming time for multiple-word updates
• Secured Silicon Sector region
– 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number
– Can be programmed and locked at the factory or by the customer
• Uniform 64 Kword/128 Kbyte Sector Architecture
– S29GL01GP: One thousand twenty-four sectors
– S29GL512P: Five hundred twelve sectors
– S29GL256P: Two hundred fifty-six sectors
– S29GL128P: One hundred twenty-eight sectors
• 100,000 erase cycles per sector typical
• 20-year data retention typical
• Offered Packages
– 56-pin TSOP
– 64-ball Fortified BGA
• Suspend and Resume commands for Program and Erase operations
• Write operation status bits indicate program and erase operation completion
• Unlock Bypass Program command to reduce programming time
• Support for CFI (Common Flash Interface)
• Persistent and Password methods of Advanced Sector Protection
• WP#/ACC input
– Accelerates programming time (when VHH is applied) for greater throughput during system production
– Protects first or last sector regardless of sector protection settings
• Hardware reset input (RESET#) resets device
• Ready/Busy# output (RY/BY#) detects program or erase cycle completion
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-S29GL01GP11TFI010 |
ECCN (US) | 3A991b.1.a. |
Part Status | Obsolete |
HTS | 8542.32.00.71 |
Automotive | No |
PPAP | No |
Cell Type | NOR |
Chip Density (bit) | 1G |
Architecture | Sectored |
Boot Block | No |
Block Organization | Symmetrical |
Address Bus Width (bit) | 27/26 |
Sector Size | 128Kbyte x 1024 |
Page Size | 8Words/16byte |
Number of Bits/Word (bit) | 45154 |
Number of Words | 128M/64M |
Programmability | Yes |
Timing Type | Asynchronous |
Max. Access Time (ns) | 110 |
Maximum Erase Time (S) | 2048/Chip |
Maximum Page Access Time (ns) | 25 |
Maximum Programming Time (ms) | 984000(Typ)/Chip |
OE Access Time (ns) | 25 |
Process Technology | 90nm, MirrorBit |
Interface Type | Parallel |
Minimum Operating Supply Voltage (V) | 2.7 |
Typical Operating Supply Voltage (V) | 3.3|3 |
Maximum Operating Supply Voltage (V) | 3.6 |
Programming Voltage (V) | 11.5 to 12.5|2.7 to 3.6 |
Operating Current (mA) | 110 |
Page Read Current (mA) | 20 |
Program Current (mA) | 90 |
Minimum Operating Temperature (°C) | -40 |
Maximum Operating Temperature (°C) | 85 |
Supplier Temperature Grade | Industrial |
Command Compatible | Yes |
ECC Support | No |
Support of Page Mode | Yes |
Minimum Endurance (Cycles) | 100000(Typ) |
Packaging | Tray |
Mounting | Surface Mount |
Package Height | 1 |
Package Width | 18.4 |
Package Length | 14 |
PCB changed | 56 |
Standard Package Name | SO |
Supplier Package | TSOP |
Pin Count | 56 |
Lead Shape | Gull-wing |
Actual product photos
Product Data Book:
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