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Professional supply Integrated circuit IC AS4C32M16D1A-5TCN SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP II

Manufacturer
Manufacturer Product Number
AS4C32M16D1A-5TCN
Description

AS4C32xx Series 512 Mb (32Mx16) DDR1 2.5 V 200 MHz Synchronous DRAM - TSOP II-66

Package Condition
Tray
Datasheet

Product Descriptions

The 512Mb DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 512 Mbits. It is internally configured as a quad 8M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK . Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The device provides programmable Read or Write burst lengths of 2, 4, or 8. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. 

The refresh functions, either Auto or Self Refresh are easy to use. In addition, 512Mb DDR features programmable DLL option. By having a programmable mode register and extended mode register, the system can choose the most suitable modes to maximize its performance. 

These devices are well suited for applications requiring high memory bandwidth, result in a device particularly well suited to high performance main memory and graphics applications.

Product Features

• Fast clock rate: 200MHz

• Differential Clock CK & CK

• Bi-directional DQS

• DLL enable/disable by EMRS 

• Fully synchronous operation

• Internal pipeline architecture

• Four internal banks, 8M x 16-bit for each bank

• Programmable Mode and Extended Mode registers

- CAS Latency: 2, 2.5, 3

- Burst length: 2, 4, 8

- Burst Type: Sequential & Interleaved

• Individual byte write mask control

• DM Write Latency = 0

• Auto Refresh and Self Refresh

• 8192 refresh cycles / 64ms

• Precharge & active power down

• Power supplies: VDD & VDDQ = 2.5V ± 0.2V

• Operating Temperature: 

- Commercial (0°C~70°C)

- Industrial (-40°C~85°C)

• Interface: SSTL_2 I/O Interface

• Package: 66 Pin TSOP II, 0.65mm pin pitch

- Pb and Halogen free

Specifications

Attribute Attribute value
ANSM-Part# ANSM-AS4C32M16D1A-5TCN
Category Integrated Circuits (ICs)
Memory
Memory
Mfr Alliance Memory, Inc.
Series -
Package Tray
Product Status Active
DigiKey Programmable Not Verified
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR
Memory Size 512Mbit
Memory Organization 32M x 16
Memory Interface Parallel
Clock Frequency 200 MHz
Write Cycle Time - Word, Page 15ns
Access Time 700 ps
Voltage - Supply 2.3V ~ 2.7V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package 66-TSOP II
Base Product Number AS4C32

    

Actual product photos

AS4C32M16D1A-5TCN

Product Data Book:

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For more product information, please download the PDF

Payment&Transportation

详情8.1

Official Certificate&Certificate

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Multiple product supply

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Company office environment

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Warehouse Real Shot

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Standard packaging

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Professional supply Integrated circuit IC AS4C32M16D1A-5TCN SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP II

AS4C32xx Series 512 Mb (32Mx16) DDR1 2.5 V 200 MHz Synchronous DRAM - TSOP II-66

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