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Professional supply Integrated circuit IC AS4C32M16D1A-5TCN SDRAM - DDR Memory IC 512Mbit Parallel 200 MHz 700 ps 66-TSOP II
AS4C32xx Series 512 Mb (32Mx16) DDR1 2.5 V 200 MHz Synchronous DRAM - TSOP II-66
Product Descriptions
The 512Mb DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM containing 512 Mbits. It is internally configured as a quad 8M x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK . Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command. The device provides programmable Read or Write burst lengths of 2, 4, or 8. An auto precharge function may be enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence.
The refresh functions, either Auto or Self Refresh are easy to use. In addition, 512Mb DDR features programmable DLL option. By having a programmable mode register and extended mode register, the system can choose the most suitable modes to maximize its performance.
These devices are well suited for applications requiring high memory bandwidth, result in a device particularly well suited to high performance main memory and graphics applications.
Product Features
• Fast clock rate: 200MHz
• Differential Clock CK & CK
• Bi-directional DQS
• DLL enable/disable by EMRS
• Fully synchronous operation
• Internal pipeline architecture
• Four internal banks, 8M x 16-bit for each bank
• Programmable Mode and Extended Mode registers
- CAS Latency: 2, 2.5, 3
- Burst length: 2, 4, 8
- Burst Type: Sequential & Interleaved
• Individual byte write mask control
• DM Write Latency = 0
• Auto Refresh and Self Refresh
• 8192 refresh cycles / 64ms
• Precharge & active power down
• Power supplies: VDD & VDDQ = 2.5V ± 0.2V
• Operating Temperature:
- Commercial (0°C~70°C)
- Industrial (-40°C~85°C)
• Interface: SSTL_2 I/O Interface
• Package: 66 Pin TSOP II, 0.65mm pin pitch
- Pb and Halogen free
Specifications
Attribute | Attribute value |
ANSM-Part# | ANSM-AS4C32M16D1A-5TCN |
Category | Integrated Circuits (ICs) |
Memory | |
Memory | |
Mfr | Alliance Memory, Inc. |
Series | - |
Package | Tray |
Product Status | Active |
DigiKey Programmable | Not Verified |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR |
Memory Size | 512Mbit |
Memory Organization | 32M x 16 |
Memory Interface | Parallel |
Clock Frequency | 200 MHz |
Write Cycle Time - Word, Page | 15ns |
Access Time | 700 ps |
Voltage - Supply | 2.3V ~ 2.7V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package | 66-TSOP II |
Base Product Number | AS4C32 |
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