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Hot sale original MG75Q2YS40 TRANSISTOR 75A 1200V N-CHANNEL IGBT 7PIN Insulated Gate BIP Transistor
Manufacturer Product Number
MG75Q2YS40
Description
MG75Q2YS40 TRANSISTOR 75A 1200V N-CHANNEL IGBT 7PIN Insulated Gate BIP Transistor
Package Condition
Original
Datasheet
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Product Details
Power Switching Applications
Motor Control Applications
High input impedance
High speed : tf = 0.5µs (Max)
trr = 0.5µs (Max)
Low saturation voltage++++++++++++ : VCE(sat) = 4.0V (Max)
Enhancement-mode
Includes a complete half bridge in one package.
The electrodes are isolated from case.
Product Description
| Type# | Description |
| ANSC PART# | ANSC-MG75Q2YS40 |
| Manufacturer | Original |
| Package Description | FLANGE MOUNT, R-XUFM-X7 |
| Pin Count | 7 |
| Additional Feature | HIGH SPEED |
| Case Connection | ISOLATED |
| Collector Current-Max (IC) | 75 A |
| Collector-Emitter Voltage-Max | 1200 V |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Fall Time-Max (tf) | 500 ns |
| Gate-Emitter Thr Voltage-Max | 6 V |
| Gate-Emitter Voltage-Max | 20 V |
| Number of Elements | 2 |
| Number of Terminals | 7 |
| Operating Temperature-Max | 150 °C |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 560 W |
| Power Dissipation-Max (Abs) | 560 W |
| Qualification Status | Not Qualified |
| Rise Time-Max (tr) | 600 ns |
| Surface Mount | NO |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | MOTOR CONTROL |
| Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 800 ns |
| Turn-on Time-Nom (ton) | 400 ns |
| VCEsat-Max | 4 V |
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MG75Q2YS40 TRANSISTOR 75A 1200V N-CHANNEL IGBT 7PIN Insulated Gate BIP Transistor
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