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Hot sale Original IPP65R150CFD Power Field-Effect Transistor 22.4A I(D) 650V 0.15ohm 1-Element N-Channel Silicon Metal-oxide
Manufacturer
Manufacturer Product Number
IPP65R150CFD
Description
Original IPP65R150CFD Power Field-Effect Transistor 22.4A I(D) 650V 0.15ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-220AB GREEN PLASTIC TO-220 3 PIN
Package Condition
Original
Description
CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
Product Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson^Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
• Pb-free plating, Halogen free mold compound
Product Applications
650V CoolMOS CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCT TV, Lighting, Server, Telecom and Solar.
Product Description
|
ANSC PART# |
ANSC- IPP65R150CFD |
|
Part# |
IPP65R150CFD |
|
Type： |
Electronic components |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Actual image of the product
| Type# | Description |
| Manufacturer | INFINEON |
| Part Package Code | TO-220AB |
| Package Description | FLANGE MOUNT, R-PSFM-T3 |
| Pin Count | 3 |
| Avalanche Energy Rating (Eas) | 614 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 650 V |
| Drain Current-Max (ID) | 22.4 A |
| Drain-source On Resistance-Max | 0.15 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 195.3 W |
| Pulsed Drain Current-Max (IDM) | 72 A |
| Surface Mount | NO |
| Terminal Finish | Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
Product datasheet
For more information, please download
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Other Products In The same category:
Original IPP65R150CFD Power Field-Effect Transistor 22.4A I(D) 650V 0.15ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-220AB GREEN PLASTIC TO-220 3 PIN
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