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Hot sale original STI24NM60N MOSFET N CH 600V 17A I2PAKN-Channel 600 V 17A (Tc) 125W (Tc) Through Hole I2PAK
MOSFET N CH 600V 17A I2PAKN-Channel 600 V 17A (Tc) 125W (Tc) Through Hole I2PAK
Product Details
STI24NM60N Overview
The maximum input capacitance of this device is 1400pF @ 50V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 17A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 73 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 68A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 3V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 600V.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
STI24NM60N Features
a continuous drain current (ID) of 17A
the turn-off delay time is 73 ns
based on its rated peak drain current 68A.
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)
STI24NM60N Applications
There are a lot of STMicroelectronics
STI24NM60N applications of single MOSFETs transistors.
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Micro Solar Inverter
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DC/DC converters
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Power Tools
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Motor Drives and Uninterruptible Power Supples
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Synchronous Rectification
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Battery Protection Circuit
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Telecom 1 Sever Power Supplies
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Industrial Power Supplies
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PFC stages, hard switching PWM stages and resonant switching
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PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Product Description
Description
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STI24NM60N
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(PRICE/EACH)
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MOSFET
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N CHANNEL
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600V
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17A
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TO-262
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TRANSISTOR POLARITY:N CHANNEL
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DRAIN SOURCE VOLTAGE VDS:600V
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CONTINUOUS DRAIN CURRENT ID:17A
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ON RESISTANCE RDS(ON):0.168OHM
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TRANSISTOR MOUNTING:THROUGH HOLE
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RDS(ON) TEST VOLTAGE VGS:10V ROHS COMPLIAN
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FACTORY WARRANTY MAY NOT APPLY. RADWELL 2-YEAR WARRANTY INCLUDED
ANSC PART# |
ANSC- STI24NM60N |
Part# |
STI24NM60N |
Type: |
Transistors |
Manufactor |
STMicroelectronics |
DC |
new |
Package / Case |
TO-262-3 Long Leads, I2PAK, TO-262AA |
Supplier Device Package |
Tube |
Product Attributes
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
FETs, MOSFETs | |
Single FETs, MOSFETs | |
Mfr | STMicroelectronics |
Series | MDmesh™ II |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 190mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 125W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
Base Product Number | STI24 |
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