Image shown is a representation only.

Exact specifications should be obtained from the product data sheet.

Trench dual core NCE30ND07S SOP8 high-voltage N+N channel IGBT field-effect transistor chip stock supply

Manufacturer
NCE
Manufacturer Product Number
NCE30ND07S
Description

High-voltage N+N-channel IGBT field-effect transistor

Package Condition
Tape and Reel
Part# NCE30ND07S
Type: high-voltage N+N-channel IGBT field-effect transistor
Manufactor NCE
DC NEW
Describe SOP8
Supplier Device Packaging REEL
Technology Trench dual core
Polarity N+N
BVDSS(V) 30
ID(A) 7
VTH(V) 1.6
RDS(ON)@10VTyp(mΩ) 18
RDS(ON)@4.5VTyp(mΩ) 25
QG(nC) 7.2
PD(W) 2
PKG /

Product Data Book:https://allnewsemi.shop/img/cms/NCE/NCE30ND07S.pdf

Write your review

Trench dual core NCE30ND07S SOP8 high-voltage N+N channel IGBT field-effect transistor chip stock supply

High-voltage N+N-channel IGBT field-effect transistor

Write your review

Other Products In The same category:

50000In stock:
Can ship immediately
QUANTITY
All prices are in USD

Factory packaging/ANSC packaging

Quantity Price You Save
100 $0.44 Up to $0.00
5000 $0.41 Up to $150.00
10000 $0.40 Up to $400.00

SEND
RFQ