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Hot sale Original IRFP4668PBF Transistors MOSFET N-Channel 200 V 130A (Tc) 520W (Tc) Through Hole TO-247AC
Manufacturer
Manufacturer Product Number
IRFP4668PBF
Description
Original IRFP4668PBF Transistors MOSFET N-Channel 200 V 130A (Tc) 520W (Tc) Through Hole TO-247AC
Package Condition
Original
Product Description
The IRFP4668PBF is a high-power N-channel enhancement-mode HEXFET transistor from Infineon Technologies, designed for switching applications. This TO-247-3 packaged transistor features a high avalanche energy rating of 760 mJ, making it suitable for demanding power electronics applications.
Product Features
High avalanche energy rating of 760 mJ
High current handling capacity of 130A continuous drain current
High voltage rating of 200V drain-to-source breakdown voltage
Low Rds(on) of 9.7mΩ at 81A and 10V
Fast switching times with a fall time of 74ns and rise time of 105ns
Operating temperature range of -55°C to 175°C
RoHS3 compliant and lead-free
Product Applications
Primary applications: High-power switching applications such as power supplies, motor drives, and DC-DC converters
Secondary applications: Audio amplifiers, LED drivers, and other high-current applications
Product Description
|
ANSC PART# |
ANSC- IRFP4668PBF |
|
Part# |
IRFP4668PBF |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
|
Part Status |
Active |
Product images
Product Attributes
|
Type |
Description |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
Infineon Technologies |
|
Series |
HEXFET® |
|
Packaging |
Tube |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
200 V |
|
Current - Continuous Drain (Id) @ 25°C |
130A (Tc) |
|
Drive Voltage (Max Rds On, Min Rds On) |
10V |
|
Rds On (Max) @ Id, Vgs |
9.7mOhm @ 81A, 10V |
|
Vgs(th) (Max) @ Id |
5V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
241 nC @ 10 V |
|
Vgs (Max) |
±30V |
|
Input Capacitance (Ciss) (Max) @ Vds |
10720 pF @ 50 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
520W (Tc) |
|
Operating Temperature |
-55°C ~ 175°C (TJ) |
|
Mounting Type |
Through Hole |
|
Supplier Device Package |
TO-247AC |
|
Package / Case |
TO-247-3 |
|
Base Product Number |
IRFP4668 |
Product datasheet
For more information, please download
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Original IRFP4668PBF Transistors MOSFET N-Channel 200 V 130A (Tc) 520W (Tc) Through Hole TO-247AC
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