Free hotline:
86-755-88844016
+852 2632 9637
Image shown is a representation only.
Exact specifications should be obtained from the product data sheet.
High voltage N-channel IGBT MOS transistor NCE30H12K TO252 chip sold in stock
Manufacturer
Manufacturer Product Number
NCE30H12K
Description
high-voltage N-channel IGBT MOS tube
Package Condition
Tape and Reel
| Part# | NCE30H12K |
| Type： | high-voltage N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | TO252 |
| Supplier Device Packaging | REEL |
| Technology | Trench |
| Polarity | N |
| BVDSS(V) | 30 |
| ID(A) | 120 |
| VTH(V) | 1.6 |
| RDS(ON)@10VTyp(mΩ) | 3 |
| RDS(ON)@4.5VTyp(mΩ) | 4.2 |
| QG(nC) | 79 |
| PD(W) | 120 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCE30H12K.pdf
.png)
Other Products In The same category:
high-voltage N-channel IGBT MOS tube
50000In stock:
Can ship immediately