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Original FDS2672 MOSFET N-CH 200V 3.9A 8SOIC N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Manufacturer
Manufacturer Product Number
FDS2672
Description
FDS2672 MOSFET N-CH 200V 3.9A 8SOIC N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
Package Condition
Tape & Reel (TR) Cut Tape (CT)
Product Details
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
• 3.0 A, 200 V. RDS(ON) = 0.125 Ω @ VGS = 10 V
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Product Description
|
ANSC PART# |
ANSC- FDS2672 |
|
Part# |
FDS2672 |
|
Type： |
Transistors |
|
Manufactor |
Original |
|
DC |
new |
Actual image of the product
|
TYPE |
DESCRIPTION |
|---|---|
|
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
|
Mfr |
onsemi |
|
Series |
UltraFET™ |
|
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
|
Part Status |
Active |
|
FET Type |
N-Channel |
|
Technology |
MOSFET (Metal Oxide) |
|
Drain to Source Voltage (Vdss) |
200 V |
|
Current - Continuous Drain (Id) @ 25°C |
3.9A (Ta) |
|
Drive Voltage (Max Rds On, Min Rds On) |
6V, 10V |
|
Rds On (Max) @ Id, Vgs |
70mOhm @ 3.9A, 10V |
|
Vgs(th) (Max) @ Id |
4V @ 250µA |
|
Gate Charge (Qg) (Max) @ Vgs |
46 nC @ 10 V |
|
Vgs (Max) |
±20V |
|
Input Capacitance (Ciss) (Max) @ Vds |
2535 pF @ 100 V |
|
FET Feature |
- |
|
Power Dissipation (Max) |
2.5W (Ta) |
|
Operating Temperature |
-55°C ~ 150°C (TJ) |
|
Mounting Type |
Surface Mount |
|
Supplier Device Package |
8-SOIC |
|
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
|
Base Product Number |
FDS26 |
Product datasheet
For more information, please download
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FDS2672 MOSFET N-CH 200V 3.9A 8SOIC N-Channel 200 V 3.9A (Ta) 2.5W (Ta) Surface Mount 8-SOIC
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