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Hot sale Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Manufacturer
Manufacturer Product Number
SQD50P04-13L_GE3
Description

Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Package Condition
Tape & Reel (TR) Cut Tape (CT)

Product Overview 

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3590pF @ 20V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.MOSFETs have 10mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1.5V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).

Product Features  

a continuous drain current (ID) of 50A
single MOSFETs transistor is 10mOhm
a threshold voltage of -1.5V
a 40V drain to source voltage (Vdss)

Product Applications

There are a lot of Vishay Siliconix
SQD50P04-13L_GE3 applications of single MOSFETs transistors.

· Uninterruptible Power Supply

· AC-DC Power Supply

· Synchronous Rectification for ATX 1 Server I Telecom PSU

· Motor drives and Uninterruptible Power Supplies

· Micro Solar Inverter

· DC/DC converters

· Power Tools

· Motor Drives and Uninterruptible Power Supples

· Synchronous Rectification

· Battery Protection Circuit

 

Product Description

Type

Description

ANSC PART#

ANSC - SQD50P04-13L_GE3

Category

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

Mfr

Vishay Siliconix

Series

TrenchFET®

Packaging

Tape & Reel (TR)

Cut Tape (CT)

Part Status

Active

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

50A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 17A, 10V

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

90 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3590 pF @ 20 V

FET Feature

-

Power Dissipation (Max)

3W (Ta), 136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-252AA

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Base Product Number

SQD50

Actual image of the product 

39096.jpg

Product datasheet   

For more information, please download

   

SQD50P04-2.png

SQD50P04-3.png

Payment&Transportation

Official Certificate&Certificate

Standard packaging

Multiple product supply

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Hot sale Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA

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