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Hot sale Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
Original SQD50P04-13L_GE3 Transistors MOSFET P-Channel 40 V 50A (Tc) 3W (Ta), 136W (Tc) Surface Mount TO-252AA
Product Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3590pF @ 20V.This device has a continuous drain current (ID) of [50A], which is its maximum continuous current.MOSFETs have 10mOhm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 10 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of -1.5V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).
Product Features
a continuous drain current (ID) of 50A
single MOSFETs transistor is 10mOhm
a threshold voltage of -1.5V
a 40V drain to source voltage (Vdss)
Product Applications
There are a lot of Vishay Siliconix
SQD50P04-13L_GE3 applications of single MOSFETs transistors.
· Uninterruptible Power Supply
· AC-DC Power Supply
· Synchronous Rectification for ATX 1 Server I Telecom PSU
· Motor drives and Uninterruptible Power Supplies
· Micro Solar Inverter
· DC/DC converters
· Power Tools
· Motor Drives and Uninterruptible Power Supples
· Synchronous Rectification
· Battery Protection Circuit
Product Description
Type |
Description |
---|---|
ANSC PART# |
ANSC - SQD50P04-13L_GE3 |
Category |
Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs |
Mfr |
Vishay Siliconix |
Series |
TrenchFET® |
Packaging |
Tape & Reel (TR) Cut Tape (CT) |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
50A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
4.5V, 10V |
Rds On (Max) @ Id, Vgs |
13mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id |
2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
90 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
3590 pF @ 20 V |
FET Feature |
- |
Power Dissipation (Max) |
3W (Ta), 136W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-252AA |
Package / Case |
TO-252-3, DPAK (2 Leads + Tab), SC-63 |
Base Product Number |
SQD50 |
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Product datasheet
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