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SGT dual core NCEP60ND60G DFN8 chip high-voltage N+N channel IGBT field-effect transistor original stock
Manufacturer
Manufacturer Product Number
NCEP60ND60G
Description
high-voltage N+N-channel IGBT field-effect transistor
Package Condition
Tape and Reel
| Part# | NCEP60ND60G |
| Type： | high-voltage N+N-channel IGBT field-effect transistor |
| Manufactor | NCE |
| DC | NEW |
| Describe | DFN8 |
| Supplier Device Packaging | REEL |
| Technology | SGT dual core |
| Polarity | N+N |
| BVDSS(V) | 60 |
| ID(A) | 55 |
| VTH(V) | 3 |
| RDS(ON)@10VTyp(mΩ) | 7.8 |
| QG(nC) | 28.5 |
| PD(W) | 70 |
| PKG | / |
Product Data Book：https://allnewsemi.shop/img/cms/NCE/NCEP60ND60G.pdf
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high-voltage N+N-channel IGBT field-effect transistor
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