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Exact specifications should be obtained from the product data sheet.
Product Details
General description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter
SOT143B package.
The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium
power applications up to 2 GHz.
Features and benefits
• Low noise, high breakdown RF transistor
• AEC-Q101 qualified
• Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
• Maximum stable gain 21 dB at 900 MHz
• 11 GHz fT silicon technology
Applications
• Applications requiring high supply voltages and high breakdown voltages
• Broadband amplifiers up to 2 GHz
• Low noise amplifiers for ISM applications
• ISM band oscillators
Product Description
|
ANSC PART# |
ANSC- BFU550 |
|
Part# |
BFU550 |
|
Type： |
Electronic components |
|
Manufactor |
- |
|
DC |
new |
Actual image of the product
Product datasheet
For more information, please download
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Official Certificate&Certificate
Standard packaging
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Can ship immediately