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Original Electronic Components IRFR1205TRPBF MOSFET N-CH 55V 44A DPAK
Manufacturer Product Number
IRFR1205TRPBF
Description
IRFR1205TRPBF Transistor N-Channel 55V 44A 107W (Tc) TO-252AA (DPAK)
Package Condition
Tape & Reel (TR)
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Product Details
Description
Fifth Generation HEXFETs utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
• Ultra Low On-Resistance
• Surface Mount (IRFR1205)
• Straight Lead (IRFU1205)
• Fast Switching
• Fully Avalanche Rated
• Lead-Free
Product Description
| Type# | Description |
| PART# | IRFR1205TRPBF |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | / |
| Series | HEXFET® |
| Packaging | Tape & Reel (TR) |
| Cut Tape (CT) | |
| / | |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 26A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA (DPAK) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR1205 |
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Product datasheet
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IRFR1205TRPBF Transistor N-Channel 55V 44A 107W (Tc) TO-252AA (DPAK)
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